cystech electronics corp. spec. no. : c442j3 issued date : 2009.03.06 revised date : page no. : 1/7 MTA06N03J3 cystek product specification n-channel enhancement mode power mosfet bv dss 25v MTA06N03J3 i d 80a r ds(on) 6m features ? 100% uis testing, @v d =15v, l=0.1mh, v g =10v, i l =40v, rated v ds =25v n-ch ? simple drive requirement ? repetitive avalanche rated ? fast switching characteristic ? rohs compliant package & halogen-free package symbol outline MTA06N03J3 to-252 absolute maximum ratings (t c =25 c, unless otherwise noted) parameter symbol limits unit drain-source voltage v ds 25 gate-source voltage v gs 20 v continuous drain current @ t c =25 c i d 80 continuous drain current @ t c =100c i d 50 pulsed drain current (note 1) i dm 170 avalanche current i as 53 a avalanche energy @ l=0.1mh, i d =53a, r g =25 e as 140 repetitive avalanche energy@ l=0.05mh (note 2) e ar 40 mj total power dissipation @ t c =25 83 total power dissipation @ t c =100 pd 45 w operating junction and storage temp erature range tj, tstg -55~+175 c note : 1. pulse width limited by maximum junction temperature 2. duty cycle 1% g gate g d s d drain s source
cystech electronics corp. spec. no. : c442j3 issued date : 2009.03.06 revised date : page no. : 2/7 MTA06N03J3 cystek product specification thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 1.8 c/w thermal resistance, junction-to-ambient, max r th,j-a 75 c/w characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 25 - - v v gs =0v, i d =250 a v gs(th) 1 1.5 3 v v ds = v gs , i d =250 a i gss - - 100 na v gs = 20, v ds =0v - - 1 v ds =20v, v gs =0v i dss - - 25 a v ds =20v, v gs =0v, tj=125 c *i d(on) 80 - - a v ds =10v, v gs =10v - 5.3 6 v gs =10v, i d =30a *r ds(on) - 7.6 9.5 m v gs =5v, i d =24a *g fs - 25 - s v ds =5v, i d =24a dynamic *qg(v gs =10v) - 53 - *qg(v gs =5v) - 30 - *qgs - 8 - *qgd - 17 - nc i d =30a, v ds =15v, v gs =10v *t d(on) - 22 - *tr - 16 - *t d(off) - 65 - *t f - 10 - ns v ds =15v, i d =25a, v gs =10v, r gs =2.7 ciss - 4840 - coss - 620 - crss - 435 - pf v gs =0v, v ds =15v, f=1mhz rg - 1.2 - v gs =15mv, v ds =0v, f=1mhz source-drain diode *i s - - 80 *i sm - - 170 a *v sd - - 1.3 v i f =i s , v gs =0v *trr - 32 - ns *qrr - 12 - nc i f =i s , v gs =0, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping marking MTA06N03J3 to-252 (rohs compliant & halogen-free) 2500 pcs / tape & reel a06n03
cystech electronics corp. spec. no. : c442j3 issued date : 2009.03.06 revised date : page no. : 3/7 MTA06N03J3 cystek product specification characteristic curves 0 v ,gate to source voltage i ,drain current( a ) 0 1 d 20 2 gs ds v = 10v 40 80 100 60 345 transfer characteristics 125 c t = - 55 c a 25 c body di ode forward v oltage vari ati on wi th source current and tem perature 0.8 i , reverse drai n cu rren t( a ) 0.0001 s 0 0.001 0.01 0.2 0.4 0.6 v = 0v 1 0.1 10 60 gs a 1.4 1.0 1.2 25 c -55 c t = 125 c v ,body diode forward voltage( v ) sd v ,gate to source voltage 6 0 2 ds(on) 0.005 0.010 gs 4 i = 30a d 0.015 0.020 0.025 8 t = 125 c t = 25 c a a 10 r , on- resi stance( ohm ) on- resi stance vari ati on wi th gate- to- source voltage 50 0.6 -50 0.8 1.0 -25 0 25 i = 30a v = 10v 1.4 1.2 1.6 1.8 150 10075 125 175 d gs r ,normalized drain - source on - resistance t ,junction tem perature( c ) ds(on) j on- resistance variation with temperature 4.5v i ,drain current( a ) on- resistance variation with drain current and gate voltage 0 1 20 d 40 gs v = 3.5v 2 3 4v 60 80 100 10v 7v 6v 5v 5.5v 2.5 1.5 0.5 d ra i n - sou rce on - resi sta n ce r ,normalized ds(on) i ,drain - source current( a ) 40 0.5 0 d 0 20 1.5 12 7v 10v 80 60 100 5v 4.5v 4v 2.5 3 3.5v 3.8v 4.3v ds on- regi on characteri sti c v ,drain- source voltage ( v )
cystech electronics corp. spec. no. : c442j3 issued date : 2009.03.06 revised date : page no. : 4/7 MTA06N03J3 cystek product specification characteristic curves(cont.) 02 04 0 60 0 2 4 6 8 10 12 q g ,gate charge(nc) v gs ,gate-source voltage (v) i d =30a v ds =5v gate charge characteristics 15v 10v ca pa cita n ce ch a ra cteristics v gs =0 v v ds -drain -t o -so u rce vltage (v) c- ca paci tan ce ( p f) 0 5 10 15 20 25 30 10 2 10 3 10 4 ciss f = 1 m hz crss co ss s ingle pulse time (s ec) s ingle puls e maximum power dis s ipation power( w ) 0.01 0 1000 500 0.1 1 2500 1500 2000 3000 10 100 1000 s ingle puls e r = 1.8 c/ w jc t = 25 c c maximum s afe operati ng area i ,d r rrent( a ) jc tc = 25 c r = 1.8 c/ w s ingle puls e gs v = 10v 0.5 0.5 d 1 2 5 1 ds 2 3 r l i m i t ain cu 50 20 10 100 300 200 d s ( o n ) d c 20 5 10 50 30 1 0 0 s 1 0 s 1 0 0 m s 1 0 m s 1 m s v ,drain- s ourc e voltage 0.5 0.3 0.2 0.05 0.03 0.02 not es : c jc jc 100 1000 j 10 1 1 dm 1.dut y cycle,d = 2.r =1.8 c/ w jc 3. t - t = p * r (t ) 4.r (t)=r(t) * r jc 1 0.2 0.05 0.1 0.1 dut y cycle = 0.5 0.01 si n g l e pu l se -2 10 0.02 0.01 10 r(t ),normalized effect ive tr ansi ent ther mal resi st ance transient thermal response curve t ,time (sec) -1 t1 t2
cystech electronics corp. spec. no. : c442j3 issued date : 2009.03.06 revised date : page no. : 5/7 MTA06N03J3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c442j3 issued date : 2009.03.06 revised date : page no. : 6/7 MTA06N03J3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c442j3 issued date : 2009.03.06 revised date : page no. : 7/7 MTA06N03J3 cystek product specification to-252 dimension *: typical inches marking: b a c e h i j k 3 2 1 d f g l date code device name style: pin 1.gate 2.drain 3.source 3-lead to-252 plastic surface mount package cystek package code: j3 millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.0177 0.0217 0.45 0.55 g 0.0866 0.1102 2.20 2.80 b 0.0650 0.0768 1.65 1.95 h - *0.0906 - *2.30 c 0.0354 0.0591 0.90 1.50 i - 0.0449 - 1.14 d 0.0177 0.0236 0.45 0.60 j - 0.0346 - 0.88 e 0.2441 0.2677 6.20 6.80 k 0.2047 0.2165 5.20 5.50 f 0.2125 0.2283 5.40 5.80 l 0.0551 0.0630 1.40 1.60 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead : kfc; pure tin plated ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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